1700V M1 planar Silicon Carbide MOSFET

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onsemi’s NTH4L028N170M1 is a SiC MOSFET developed for top voltage renewable power purposes.

NTH4L028N170M1 (Supply: onsemi)

NTH4L028N170M1 is a 1700V M1 planar EliteSiC MOSFET from onsemi. It’s a high-efficiency silicon carbide (SiC) MOSFET rated for 1700V. The NTH4L028N170M1 affords dependable, high-efficiency efficiency for power infrastructure and industrial drive purposes. It’s optimized for fast-switching purposes. The planar know-how works reliably with damaging gate voltage drives and turns off spikes on the gate. The NTH4L029N170 has been launched for renewable power purposes. The MOSFET is appropriate to be used in renewable-energy grid tools equivalent to battery power storage methods, photo voltaic inverters, wind generators, and many others. which works at excessive voltages.

onsemi NTH4L028N170M1 delivers the next breakdown voltage which is crucial for high-power industrial purposes. The 1700 V avalanche-rated EliteSiC Schottky diode NDSH10170A thus permits designers to attain secure high-voltage operation and higher effectivity even at increased temperatures. The MOSFET is available in a TO247-4LD package deal for low frequent supply inductance. It has a low drain-source resistance RDS(ON) of 28mohm and affords low EON and EOFF losses.

This MOSFET delivers optimum efficiency when pushed with a 20V gate drive but additionally works nicely with an 18V gate drive. The NTH4L028N170M1 MOSFET has the next breakdown voltage (BV) which makes it appropriate to be used in renewable power purposes.

With the 1700 V EliteSiC MOSFET (NTH4L028N170M1), onsemi delivers increased breakdown voltage (BV) SiC options, required for high-power industrial purposes. The 2 1700 V avalanche-rated EliteSiC Schottky diodes (NDSH25170A, NDSH10170A) enable designers to attain secure high-voltage operation at elevated temperatures whereas providing excessive effectivity enabled by SiC.

“By offering best-in-class effectivity with decreased energy losses, the brand new 1700 V EliteSiC gadgets reinforce the excessive requirements of superior efficiency and high quality for merchandise in our EliteSiC household in addition to additional develop the depth and breadth of onsemi’s EliteSiC,” stated Simon Keeton, govt vice chairman and common supervisor, Energy Options Group, on semi.

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